The frequency control of laser diodes

control of the optical properties of nanoparticles by laser fields

در این پایان نامه، درهمتنیدگی بین یک سیستم نقطه کوانتومی دوگانه(مولکول نقطه کوانتومی) و میدان مورد مطالعه قرار گرفته است. از آنتروپی ون نیومن به عنوان ابزاری برای بررسی درهمتنیدگی بین اتم و میدان استفاده شده و تاثیر پارامترهای مختلف، نظیر تونل زنی(که توسط تغییر ولتاژ ایجاد می شود)، شدت میدان و نسبت دو گسیل خودبخودی بر رفتار درجه درهمتنیدگی سیستم بررسی شده اشت.با تغییر هر یک از این پارامترها، در...

Low Frequency Noise Characteristics of Multimode and Singlemode Laser Diodes

Frequency-converted dilute nitride laser diodes for mobile display applications

We demonstrate a 1240-nm GaInNAs multi-quantum well laser diode with an integrated saturable electro-absorber whose wavelength is converted to 620 nm. For conversion, we used a MgO:LN nonlinear waveguide crystal with an integrated Bragg grating in direct coupling configuration. Broadened visible spectral width and reduced speckle as well as a high extinction ratio between the below and above th...

Improving Blue InGaN Laser Diodes Performance with Waveguide Structure Engineering

To enhance lasers’ power and improve their performance, a model wasapplied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, whichis much easier to implement. The conventional and new laser structures weretheoretically investigated using simulation software PICS3D, which self-consistentlycombines 3D simulation of carrier transport, self-heating, and opt...

InGaN-BASED LASER DIODES

UV InGaN and GaN single-quantum well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire, but only for highcurrent operation. At low-current operation, both LEDs ...